SI7846DP Specs and Replacement

Type Designator: SI7846DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: POWERPAK-SO-8

SI7846DP substitution

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SI7846DP datasheet

 ..1. Size:293K  vishay
si7846dp.pdf pdf_icon

SI7846DP

Si7846DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.050 at VGS = 10 V 6.7 150 TrenchFET Power MOSFETS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested PowerPAK SO-8 APPLICA... See More ⇒

 9.1. Size:97K  vishay
si7848dp.pdf pdf_icon

SI7846DP

Si7848DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( )ID (A) Pb-free New Low Thermal Resistance 0.009 at VGS = 10 V 17 Available PowerPAK Package with Low 1.07-mm 40 RoHS* 0.012 at VGS = 4.5 V 15 Profile COMPLIANT PWM Optimized for Fast Switching 100 % Rg Tested PowerPAK SO-8 APPLI... See More ⇒

 9.2. Size:471K  vishay
si7848bd.pdf pdf_icon

SI7846DP

Si7848BDP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 47 40 15 nC 100 % Rg and UIS Tested 0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/EC PowerPAK SO-8 APPLICATIONS DC/DC Con... See More ⇒

 9.3. Size:474K  vishay
si7848bdp.pdf pdf_icon

SI7846DP

Si7848BDP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 47 40 15 nC 100 % Rg and UIS Tested 0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/EC PowerPAK SO-8 APPLICATIONS DC/DC Con... See More ⇒

Detailed specifications: SI7802DN, SI7804DN, SI7806ADN, SI7810DN, SI7812DN, SI7818DN, SI7820DN, SI7840BDP, IRFB3607, SI7848BDP, SI7848DP, SI7850DP, SI7852ADP, SI7852DP, SI7856ADP, SI7858ADP, SI7858BDP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.