All MOSFET. SI7858ADP Datasheet

 

SI7858ADP Datasheet and Replacement


   Type Designator: SI7858ADP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 2680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: POWERPAK-SO-8
 

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SI7858ADP Datasheet (PDF)

 ..1. Size:482K  vishay
si7858adp.pdf pdf_icon

SI7858ADP

Si7858ADPVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0026 at VGS = 4.5 V 29 New Low Thermal Resistance PowerPAK COMPLIANT12 540.0037 at VGS = 2.5 V 23Package with Low 1.07 mm Profile 100 % Rg Tested PowerPAK SO-8 APPLICATIONS

 8.1. Size:512K  vishay
si7858bdp.pdf pdf_icon

SI7858ADP

New ProductSi7858BDPVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 4.5 V 40 TrenchFET Power MOSFET12 0.0030 at VGS = 2.5 V 40 56 nC 100 % Rg Tested0.0037 at VGS = 1.8 V 40 100 % UIS Tested Compliant to RoHS Directive 200

 9.1. Size:311K  vishay
si7850dp.pdf pdf_icon

SI7858ADP

Si7850DPVishay SiliconixN-Channel 60-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.022 at VGS = 10 V 10.3 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 8.7 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching

 9.2. Size:469K  vishay
si7852dp.pdf pdf_icon

SI7858ADP

Si7852DPVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.0165 at VGS = 10 V TrenchFET Power MOSFETS12.580 New Low Thermal Resistance PowerPAK0.022 at VGS = 6 V 10.9Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested

Datasheet: SI7840BDP , SI7846DP , SI7848BDP , SI7848DP , SI7850DP , SI7852ADP , SI7852DP , SI7856ADP , IRF1407 , SI7858BDP , SI7860ADP , SI7860DP , SI7862ADP , SI7866ADP , SI7868ADP , SI7880ADP , SI7882DP .

History: DH065N04F | JCS730VC

Keywords - SI7858ADP MOSFET datasheet

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