SI7888DP Specs and Replacement
Type Designator: SI7888DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: POWERPAK-SO-8
SI7888DP substitution
- MOSFET ⓘ Cross-Reference Search
SI7888DP datasheet
si7888dp.pdf
Si7888DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET RoHS 0.012 at VGS = 10 V 15.7 New Low Thermal Resistance PowerPAK COMPLIANT 30 0.020 at VGS = 4.5 V 12.1 Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Rectifier Operation ... See More ⇒
si7884bd.pdf
New Product Si7884BDP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) TrenchFET Power MOSFET 0.0075 at VGS = 10 V 58 100 % Rg and UIS Tested RoHS 40 21 nC COMPLIANT 0.009 at VGS = 4.5 V 53 APPLICATIONS PowerPAK SO-8 Synchronous Rectifier S 6.15 mm 5.15 mm 1 S... See More ⇒
si7884bdp.pdf
New Product Si7884BDP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) TrenchFET Power MOSFET 0.0075 at VGS = 10 V 58 100 % Rg and UIS Tested RoHS 40 21 nC COMPLIANT 0.009 at VGS = 4.5 V 53 APPLICATIONS PowerPAK SO-8 Synchronous Rectifier S 6.15 mm 5.15 mm 1 S... See More ⇒
Detailed specifications: SI7860DP, SI7862ADP, SI7866ADP, SI7868ADP, SI7880ADP, SI7882DP, SI7884BDP, SI7886ADP, SI2302, SI7892BDP, SI7904BDN, SI7905DN, SI7911DN, SI7913DN, SI7922DN, SI7923DN, SI7938DP
Keywords - SI7888DP MOSFET specs
SI7888DP cross reference
SI7888DP equivalent finder
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