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SI7888DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI7888DP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.7 nC
   trⓘ - Время нарастания: 11 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: POWERPAK-SO-8

 Аналог (замена) для SI7888DP

 

 

SI7888DP Datasheet (PDF)

 ..1. Size:461K  vishay
si7888dp.pdf

SI7888DP
SI7888DP

Si7888DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.012 at VGS = 10 V 15.7 New Low Thermal Resistance PowerPAK COMPLIANT 300.020 at VGS = 4.5 V 12.1 Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierOperation

 9.1. Size:477K  vishay
si7884bd.pdf

SI7888DP
SI7888DP

New ProductSi7884BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0075 at VGS = 10 V 58 100 % Rg and UIS TestedRoHS40 21 nCCOMPLIANT0.009 at VGS = 4.5 V 53APPLICATIONSPowerPAK SO-8 Synchronous RectifierS6.15 mm 5.15 mm1S

 9.2. Size:465K  vishay
si7860adp si7880adp.pdf

SI7888DP
SI7888DP

Si7860ADPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0095 at VGS = 10 V 16 TrenchFET Power MOSFET300.0125 at VGS = 4.5 V PWM Optimized for High Efficiency16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile

 9.3. Size:480K  vishay
si7884bdp.pdf

SI7888DP
SI7888DP

New ProductSi7884BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0075 at VGS = 10 V 58 100 % Rg and UIS TestedRoHS40 21 nCCOMPLIANT0.009 at VGS = 4.5 V 53APPLICATIONSPowerPAK SO-8 Synchronous RectifierS6.15 mm 5.15 mm1S

 9.4. Size:462K  vishay
si7886adp.pdf

SI7888DP
SI7888DP

Si7886ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0040 at VGS = 10 V 25COMPLIANT Optimized for Low Side Synchronous 30 470.0048 at VGS = 4.5 V 23 Rectifier Operation New Low Thermal Resistance PowerPAK Package withLow 1.07

 9.5. Size:456K  vishay
si7882dp.pdf

SI7888DP
SI7888DP

Si7882DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)Available TrenchFET Power MOSFET0.0055 at VGS = 4.5 V 22RoHS* New Low Thermal Resistance PowerPAK 12COMPLIANT0.008 at VGS = 2.5 V 18 Package with Low 1.07 mm Profile PWM Optimized for High Efficiency

 9.6. Size:77K  vishay
si7884dp.pdf

SI7888DP
SI7888DP

Si7884DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETSRoHS0.007 at VGS = 10 V 20COMPLIANT New Low Thermal Resistance PowerPAK 400.0095 at VGS = 4.5 V 17 Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK

 9.7. Size:297K  vishay
si7880adp.pdf

SI7888DP
SI7888DP

Si7880ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.003 at VGS = 10 V 40COMPLIANT PWM Optimized30 37 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package withLow 1.07 mm Profile 100 % Rg TestedPowerPAK SO

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