SI7960DP Specs and Replacement

Type Designator: SI7960DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: POWERPAK-SO-8

SI7960DP substitution

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SI7960DP datasheet

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Detailed specifications: SI7923DN, SI7938DP, SI7942DP, SI7945DP, SI7946ADP, SI7946DP, SI7949DP, SI7956DP, IRF1405, SI7980DP, SI7994DP, SI7997DP, SI7998DP, SI8100DB, SI8401DB, SI8402DB, SI8404DB

Keywords - SI7960DP MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs