SI7997DP Specs and Replacement
Type Designator: SI7997DP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 615 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: POWERPAK-SO-8
SI7997DP substitution
- MOSFET ⓘ Cross-Reference Search
SI7997DP datasheet
Detailed specifications: SI7945DP, SI7946ADP, SI7946DP, SI7949DP, SI7956DP, SI7960DP, SI7980DP, SI7994DP, IRFZ46N, SI7998DP, SI8100DB, SI8401DB, SI8402DB, SI8404DB, SI8405DB, SI8406DB, SI8407DB
Keywords - SI7997DP MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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