SI8401DB Specs and Replacement

Type Designator: SI8401DB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: MICRO-FOOT

SI8401DB substitution

- MOSFET ⓘ Cross-Reference Search

 

SI8401DB datasheet

 ..1. Size:199K  vishay
 si8401db.pdf pdf_icon

SI8401DB

... See More ⇒

 9.1. Size:214K  vishay
 si8409db.pdf pdf_icon

SI8401DB

... See More ⇒

 9.2. Size:199K  vishay
 si8405db.pdf pdf_icon

SI8401DB

... See More ⇒

 9.3. Size:145K  vishay
 si8406db.pdf pdf_icon

SI8401DB

... See More ⇒

SHOW MORE

Detailed specifications: SI7949DP, SI7956DP, SI7960DP, SI7980DP, SI7994DP, SI7997DP, SI7998DP, SI8100DB, IRF9640, SI8402DB, SI8404DB, SI8405DB, SI8406DB, SI8407DB, SI8409DB, SI8410DB, SI8413DB

Keywords - SI8401DB MOSFET specs

 SI8401DB cross reference

 SI8401DB equivalent finder

 SI8401DB pdf lookup

 SI8401DB substitution

 SI8401DB replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.