SI8410DB Specs and Replacement
Type Designator: SI8410DB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: MICRO-FOOT-1X1
SI8410DB substitution
- MOSFET ⓘ Cross-Reference Search
SI8410DB datasheet
Detailed specifications: SI8100DB, SI8401DB, SI8402DB, SI8404DB, SI8405DB, SI8406DB, SI8407DB, SI8409DB, AOD4184A, SI8413DB, SI8415DB, SI8416DB, SI8417DB, SI8424CDB, SI8424DB, SI8425DB, SI8429DB
Keywords - SI8410DB MOSFET specs
SI8410DB cross reference
SI8410DB equivalent finder
SI8410DB pdf lookup
SI8410DB substitution
SI8410DB replacement
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