SI8416DB Specs and Replacement

Type Designator: SI8416DB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: MICRO-FOOT

SI8416DB substitution

- MOSFET ⓘ Cross-Reference Search

 

SI8416DB datasheet

 ..1. Size:136K  vishay
 si8416db.pdf pdf_icon

SI8416DB

... See More ⇒

 9.1. Size:200K  vishay
 si8417db.pdf pdf_icon

SI8416DB

... See More ⇒

 9.2. Size:213K  vishay
 si8415db.pdf pdf_icon

SI8416DB

... See More ⇒

 9.3. Size:213K  vishay
 si8413db.pdf pdf_icon

SI8416DB

... See More ⇒

SHOW MORE

Detailed specifications: SI8404DB, SI8405DB, SI8406DB, SI8407DB, SI8409DB, SI8410DB, SI8413DB, SI8415DB, IRFP064N, SI8417DB, SI8424CDB, SI8424DB, SI8425DB, SI8429DB, SI8435DB, SI8439DB, SI8441DB

Keywords - SI8416DB MOSFET specs

 SI8416DB cross reference

 SI8416DB equivalent finder

 SI8416DB pdf lookup

 SI8416DB substitution

 SI8416DB replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs