SI8425DB Specs and Replacement

Type Designator: SI8425DB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: MICRO-FOOT

SI8425DB substitution

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SI8425DB datasheet

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Detailed specifications: SI8409DB, SI8410DB, SI8413DB, SI8415DB, SI8416DB, SI8417DB, SI8424CDB, SI8424DB, IRF3205, SI8429DB, SI8435DB, SI8439DB, SI8441DB, SI8445DB, SI8447DB, SI8451DB, SI8457DB

Keywords - SI8425DB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs