SI8465DB Specs and Replacement
Type Designator: SI8465DB
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
Package: MICRO-FOOT
SI8465DB substitution
- MOSFET ⓘ Cross-Reference Search
SI8465DB datasheet
Detailed specifications: SI8435DB, SI8439DB, SI8441DB, SI8445DB, SI8447DB, SI8451DB, SI8457DB, SI8461DB, IRF1404, SI8466EDB, SI8467DB, SI8469DB, SI8472DB, SI8473EDB, SI8475EDB, SI8483DB, SI8487DB
Keywords - SI8465DB MOSFET specs
SI8465DB cross reference
SI8465DB equivalent finder
SI8465DB pdf lookup
SI8465DB substitution
SI8465DB replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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