SI8475EDB Specs and Replacement

Type Designator: SI8475EDB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: MICRO-FOOT

SI8475EDB substitution

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SI8475EDB datasheet

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Detailed specifications: SI8457DB, SI8461DB, SI8465DB, SI8466EDB, SI8467DB, SI8469DB, SI8472DB, SI8473EDB, IRFB4227, SI8483DB, SI8487DB, SI8489EDB, SI8497DB, SI8499DB, SI8800EDB, SI8802DB, SI8805EDB

Keywords - SI8475EDB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs