SI8489EDB Specs and Replacement
Type Designator: SI8489EDB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: MICRO-FOOT
SI8489EDB substitution
SI8489EDB datasheet
Detailed specifications: SI8466EDB , SI8467DB , SI8469DB , SI8472DB , SI8473EDB , SI8475EDB , SI8483DB , SI8487DB , AON6414A , SI8497DB , SI8499DB , SI8800EDB , SI8802DB , SI8805EDB , SI8806DB , SI8808DB , SI8809EDB .
Keywords - SI8489EDB MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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