SI8489EDB Datasheet. Specs and Replacement

Type Designator: SI8489EDB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: MICRO-FOOT

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SI8489EDB datasheet

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Detailed specifications: SI8466EDB, SI8467DB, SI8469DB, SI8472DB, SI8473EDB, SI8475EDB, SI8483DB, SI8487DB, 10N60, SI8497DB, SI8499DB, SI8800EDB, SI8802DB, SI8805EDB, SI8806DB, SI8808DB, SI8809EDB

Keywords - SI8489EDB MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.