SI8497DB Specs and Replacement

Type Designator: SI8497DB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 121 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: MICRO-FOOT

SI8497DB substitution

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SI8497DB datasheet

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SI8497DB

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SI8497DB

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Detailed specifications: SI8467DB, SI8469DB, SI8472DB, SI8473EDB, SI8475EDB, SI8483DB, SI8487DB, SI8489EDB, IRFB4115, SI8499DB, SI8800EDB, SI8802DB, SI8805EDB, SI8806DB, SI8808DB, SI8809EDB, SI8810

Keywords - SI8497DB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs