SI8800EDB Specs and Replacement
Type Designator: SI8800EDB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 85 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: MICRO-FOOT
SI8800EDB substitution
- MOSFET ⓘ Cross-Reference Search
SI8800EDB datasheet
Detailed specifications: SI8472DB , SI8473EDB , SI8475EDB , SI8483DB , SI8487DB , SI8489EDB , SI8497DB , SI8499DB , P55NF06 , SI8802DB , SI8805EDB , SI8806DB , SI8808DB , SI8809EDB , SI8810 , SI8810EDB , SI8812DB .
Keywords - SI8800EDB MOSFET specs
SI8800EDB cross reference
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SI8800EDB replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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