SI8806DB Specs and Replacement
Type Designator: SI8806DB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: MICRO-FOOT
SI8806DB substitution
- MOSFET ⓘ Cross-Reference Search
SI8806DB datasheet
Detailed specifications: SI8483DB, SI8487DB, SI8489EDB, SI8497DB, SI8499DB, SI8800EDB, SI8802DB, SI8805EDB, IRFP250N, SI8808DB, SI8809EDB, SI8810, SI8810EDB, SI8812DB, SI8816EDB, SI8817DB, SI8819EDB
Keywords - SI8806DB MOSFET specs
SI8806DB cross reference
SI8806DB equivalent finder
SI8806DB pdf lookup
SI8806DB substitution
SI8806DB replacement
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