SI8809EDB PDF Specs and Replacement
Type Designator: SI8809EDB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MICRO-FOOT
SI8809EDB substitution
SI8809EDB PDF Specs
Detailed specifications: SI8489EDB , SI8497DB , SI8499DB , SI8800EDB , SI8802DB , SI8805EDB , SI8806DB , SI8808DB , IRF9540 , SI8810 , SI8810EDB , SI8812DB , SI8816EDB , SI8817DB , SI8819EDB , SI8821EDB , SI8822 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
