SI8809EDB Datasheet. Specs and Replacement

Type Designator: SI8809EDB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: MICRO-FOOT

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Detailed specifications: SI8489EDB, SI8497DB, SI8499DB, SI8800EDB, SI8802DB, SI8805EDB, SI8806DB, SI8808DB, IRF4905, SI8810, SI8810EDB, SI8812DB, SI8816EDB, SI8817DB, SI8819EDB, SI8821EDB, SI8822

Keywords - SI8809EDB MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.