SI8810 Specs and Replacement
Type Designator: SI8810
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT-23
SI8810 substitution
- MOSFET ⓘ Cross-Reference Search
SI8810 datasheet
si8810.pdf
SI8810 Features Low RDS(ON) Rugged and Reliable ESD Protected Gate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS N-Channel MOSFET Compliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Maximum Ratings Operating Junction Tempera... See More ⇒
Detailed specifications: SI8497DB, SI8499DB, SI8800EDB, SI8802DB, SI8805EDB, SI8806DB, SI8808DB, SI8809EDB, AON7408, SI8810EDB, SI8812DB, SI8816EDB, SI8817DB, SI8819EDB, SI8821EDB, SI8822, SI8851EDB
Keywords - SI8810 MOSFET specs
SI8810 cross reference
SI8810 equivalent finder
SI8810 pdf lookup
SI8810 substitution
SI8810 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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