SI8812DB Specs and Replacement
Type Designator: SI8812DB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: MICRO-FOOT
SI8812DB substitution
- MOSFET ⓘ Cross-Reference Search
SI8812DB datasheet
Detailed specifications: SI8800EDB, SI8802DB, SI8805EDB, SI8806DB, SI8808DB, SI8809EDB, SI8810, SI8810EDB, STP75NF75, SI8816EDB, SI8817DB, SI8819EDB, SI8821EDB, SI8822, SI8851EDB, SI9407BDY, SI9410BDY
Keywords - SI8812DB MOSFET specs
SI8812DB cross reference
SI8812DB equivalent finder
SI8812DB pdf lookup
SI8812DB substitution
SI8812DB replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPB80N03S4L-03
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