SI8821EDB MOSFET. Datasheet pdf. Equivalent
Type Designator: SI8821EDB
Marking Code: AL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 1.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: MICRO-FOOT-0.8X0.8
SI8821EDB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI8821EDB Datasheet (PDF)
si8823edb.pdf
Si8823EDBwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMICRO FOOT 0.8 x 0.8S TrenchFET Gen III p-channel power MOSFET22SS Compact 0.8 mm x 0.8 mm outline area33 Low 0.4 mm max. profile RDS(on) rating at VGS = -1.5 V Typical ESD protection: 1900 V HBM11GG Material categorization: for definitions of compliance 4
si8824edb.pdf
Si8824EDBwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Ultra small 0.8 mm x 0.8 mm outline0.075 at VGS = 4.5 V 2.9 Ultra thin 0.357 mm height0.082 at VGS = 2.5 V 2.7 Typical ESD protection 2000 V (HBM)20 0.090 at VGS = 1.8 V 2.6 2.7 nC Material categ
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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