SI8821EDB PDF and Equivalents Search

 

SI8821EDB Specs and Replacement

Type Designator: SI8821EDB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: MICRO-FOOT-0.8X0.8

SI8821EDB substitution

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SI8821EDB datasheet

 ..1. Size:134K  vishay
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SI8821EDB

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SI8821EDB

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 9.2. Size:142K  vishay
 si8823edb.pdf pdf_icon

SI8821EDB

Si8823EDB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MICRO FOOT 0.8 x 0.8 S TrenchFET Gen III p-channel power MOSFET 2 2 S S Compact 0.8 mm x 0.8 mm outline area 3 3 Low 0.4 mm max. profile RDS(on) rating at VGS = -1.5 V Typical ESD protection 1900 V HBM 1 1 G G Material categorization for definitions of compliance 4... See More ⇒

 9.3. Size:155K  vishay
 si8824edb.pdf pdf_icon

SI8821EDB

Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) Ultra small 0.8 mm x 0.8 mm outline 0.075 at VGS = 4.5 V 2.9 Ultra thin 0.357 mm height 0.082 at VGS = 2.5 V 2.7 Typical ESD protection 2000 V (HBM) 20 0.090 at VGS = 1.8 V 2.6 2.7 nC Material categ... See More ⇒

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Detailed specifications: SI8808DB, SI8809EDB, SI8810, SI8810EDB, SI8812DB, SI8816EDB, SI8817DB, SI8819EDB, IRLB4132, SI8822, SI8851EDB, SI9407BDY, SI9410BDY, SI9424BDY, SI9424DY, SI9433BDY, SI9434BDY

Keywords - SI8821EDB MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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