All MOSFET. SI8821EDB Datasheet

 

SI8821EDB Datasheet and Replacement


   Type Designator: SI8821EDB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: MICRO-FOOT-0.8X0.8
 

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SI8821EDB Datasheet (PDF)

 ..1. Size:134K  vishay
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SI8821EDB

 9.1. Size:153K  vishay
 si8822.pdf pdf_icon

SI8821EDB

 9.2. Size:142K  vishay
 si8823edb.pdf pdf_icon

SI8821EDB

Si8823EDBwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMICRO FOOT 0.8 x 0.8S TrenchFET Gen III p-channel power MOSFET22SS Compact 0.8 mm x 0.8 mm outline area33 Low 0.4 mm max. profile RDS(on) rating at VGS = -1.5 V Typical ESD protection: 1900 V HBM11GG Material categorization: for definitions of compliance 4

 9.3. Size:155K  vishay
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SI8821EDB

Si8824EDBwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Ultra small 0.8 mm x 0.8 mm outline0.075 at VGS = 4.5 V 2.9 Ultra thin 0.357 mm height0.082 at VGS = 2.5 V 2.7 Typical ESD protection 2000 V (HBM)20 0.090 at VGS = 1.8 V 2.6 2.7 nC Material categ

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Datasheet: SI8808DB , SI8809EDB , SI8810 , SI8810EDB , SI8812DB , SI8816EDB , SI8817DB , SI8819EDB , IRLB4132 , SI8822 , SI8851EDB , SI9407BDY , SI9410BDY , SI9424BDY , SI9424DY , SI9433BDY , SI9434BDY .

History: NVMFS5C426N

Keywords - SI8821EDB MOSFET datasheet

 SI8821EDB cross reference
 SI8821EDB equivalent finder
 SI8821EDB lookup
 SI8821EDB substitution
 SI8821EDB replacement

 

 
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