SI9410BDY Datasheet and Replacement
Type Designator: SI9410BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO-8
SI9410BDY substitution
SI9410BDY Datasheet (PDF)
si9410bdy-t1.pdf

SI9410BDY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
si9410dy.pdf

SMD Type MOSFETN-Channel MOSFETSI9410DY (KI9410DY)SOP-8 Features VDS (V) = 30V ID = 7 A (VGS = 10V)1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 40m (VGS = 5V)1 Source 5 Drain RDS(ON) 50m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou
Datasheet: SI8812DB , SI8816EDB , SI8817DB , SI8819EDB , SI8821EDB , SI8822 , SI8851EDB , SI9407BDY , 2SK3568 , SI9424BDY , SI9424DY , SI9433BDY , SI9434BDY , SI9926CDY , SI9933CDY , SI9934BDY , SI9945BDY .
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