All MOSFET. SI9410BDY Datasheet

 

SI9410BDY Datasheet and Replacement


   Type Designator: SI9410BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SO-8
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SI9410BDY Datasheet (PDF)

 ..1. Size:245K  vishay
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SI9410BDY

 0.1. Size:866K  cn vbsemi
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SI9410BDY

SI9410BDY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 8.1. Size:42K  vishay
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SI9410BDY

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SI9410BDY

SMD Type MOSFETN-Channel MOSFETSI9410DY (KI9410DY)SOP-8 Features VDS (V) = 30V ID = 7 A (VGS = 10V)1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 40m (VGS = 5V)1 Source 5 Drain RDS(ON) 50m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

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History: 2SK2977LS | 2SK3082 | SIB411DK | SIB412DK | 2SK2973 | 2N6800LCC4 | SI9434BDY

Keywords - SI9410BDY MOSFET datasheet

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