SI9424DY Specs and Replacement
Type Designator: SI9424DY
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO-8
SI9424DY substitution
- MOSFET ⓘ Cross-Reference Search
SI9424DY datasheet
si9424dy-t1-e3.pdf
SI9424DY-T1-E3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Ty... See More ⇒
Detailed specifications: SI8817DB, SI8819EDB, SI8821EDB, SI8822, SI8851EDB, SI9407BDY, SI9410BDY, SI9424BDY, SKD502T, SI9433BDY, SI9434BDY, SI9926CDY, SI9933CDY, SI9934BDY, SI9945BDY, JCS5N50VT, JCS5N50RT
Keywords - SI9424DY MOSFET specs
SI9424DY cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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