SI9424DY Datasheet and Replacement
Type Designator: SI9424DY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SO-8
SI9424DY substitution
SI9424DY Datasheet (PDF)
si9424dy-t1-e3.pdf
SI9424DY-T1-E3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Ty
Datasheet: SI8817DB , SI8819EDB , SI8821EDB , SI8822 , SI8851EDB , SI9407BDY , SI9410BDY , SI9424BDY , SPP20N60C3 , SI9433BDY , SI9434BDY , SI9926CDY , SI9933CDY , SI9934BDY , SI9945BDY , JCS5N50VT , JCS5N50RT .
History: G90N04 | AOT500 | FQB6N80 | WMK25N65EM | IRF1010EZS | AOT5N60 | FXN25S55GF
Keywords - SI9424DY MOSFET datasheet
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History: G90N04 | AOT500 | FQB6N80 | WMK25N65EM | IRF1010EZS | AOT5N60 | FXN25S55GF
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