SI9933CDY PDF and Equivalents Search

 

SI9933CDY Specs and Replacement

Type Designator: SI9933CDY

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SO-8

SI9933CDY substitution

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SI9933CDY datasheet

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SI9933CDY

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SI9933CDY

SI9933CDY www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi... See More ⇒

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SI9933CDY

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Detailed specifications: SI8851EDB, SI9407BDY, SI9410BDY, SI9424BDY, SI9424DY, SI9433BDY, SI9434BDY, SI9926CDY, 12N60, SI9934BDY, SI9945BDY, JCS5N50VT, JCS5N50RT, JCS5N50CT, JCS5N50FT, JCS7N65CB, JCS7N65FB

Keywords - SI9933CDY MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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