SI9933CDY Datasheet and Replacement
Type Designator: SI9933CDY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SO-8
SI9933CDY substitution
SI9933CDY Datasheet (PDF)
si9933cdy.pdf
SI9933CDYwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi
Datasheet: SI8851EDB , SI9407BDY , SI9410BDY , SI9424BDY , SI9424DY , SI9433BDY , SI9434BDY , SI9926CDY , IRF1010E , SI9934BDY , SI9945BDY , JCS5N50VT , JCS5N50RT , JCS5N50CT , JCS5N50FT , JCS7N65CB , JCS7N65FB .
History: WMK180N03TS | FQB6N80 | WMK25N65EM | IRF1010EZS | AOT500 | AOT5N60 | FXN25S55GF
Keywords - SI9933CDY MOSFET datasheet
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History: WMK180N03TS | FQB6N80 | WMK25N65EM | IRF1010EZS | AOT500 | AOT5N60 | FXN25S55GF
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