SI9945BDY Datasheet and Replacement
Type Designator: SI9945BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SO-8
SI9945BDY substitution
SI9945BDY Datasheet (PDF)
si9945bdy-t1.pdf
SI9945BDY-T1www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Cha
Datasheet: SI9410BDY , SI9424BDY , SI9424DY , SI9433BDY , SI9434BDY , SI9926CDY , SI9933CDY , SI9934BDY , IRF530 , JCS5N50VT , JCS5N50RT , JCS5N50CT , JCS5N50FT , JCS7N65CB , JCS7N65FB , MDF13N65B , AOD452A .
History: IPW65R048CFDA
Keywords - SI9945BDY MOSFET datasheet
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History: IPW65R048CFDA
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