All MOSFET. IRFP640 Datasheet

 

IRFP640 Datasheet and Replacement


   Type Designator: IRFP640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

 IRFP640 substitution

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IRFP640 Datasheet (PDF)

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IRFP640

IRFP640 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Fast switching Ease of Paralleling ID = 18A Simple Drive Requirements RDS(ON) =0.18Description Third Generation HEXFETs from International Rectifier www.DataSheet4U.comprovide the designer with the best combination of fast switching, ruggedized device design, low on-res

Datasheet: JCS7N65FB , MDF13N65B , AOD452A , APM2030N , CEP603AL , CEB603AL , HY1906P , HY1906B , RFP50N06 , MMD70R900P , N6004NZ , PHP45N03LTA , PHB45N03LTA , PHD45N03LTA , RU190N08 , RU190N08Q , RU190N08R .

History: STB200N4F3 | R6524ENZ

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