IRFP640 PDF and Equivalents Search

 

IRFP640 Specs and Replacement

Type Designator: IRFP640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220

IRFP640 substitution

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IRFP640 datasheet

 ..1. Size:209K  no
 irfp640.pdf pdf_icon

IRFP640

IRFP640 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Fast switching Ease of Paralleling ID = 18A Simple Drive Requirements RDS(ON) =0.18 Description Third Generation HEXFETs from International Rectifier www.DataSheet4U.com provide the designer with the best combination of fast switching, ruggedized device design, low on-res... See More ⇒

Detailed specifications: JCS7N65FB, MDF13N65B, AOD452A, APM2030N, CEP603AL, CEB603AL, HY1906P, HY1906B, IRF1407, MMD70R900P, N6004NZ, PHP45N03LTA, PHB45N03LTA, PHD45N03LTA, RU190N08, RU190N08Q, RU190N08R

Keywords - IRFP640 MOSFET specs

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