All MOSFET. PHP45N03LTA Datasheet

 

PHP45N03LTA Datasheet and Replacement


   Type Designator: PHP45N03LTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO-220AB
 

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PHP45N03LTA Datasheet (PDF)

 ..1. Size:113K  philips
 php45n03lta phb45n03lta phd45n03lta.pdf pdf_icon

PHP45N03LTA

PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance

 4.1. Size:89K  philips
 php45n03lt phb45n03lt phd45n03lt.pdf pdf_icon

PHP45N03LTA

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

 4.2. Size:295K  philips
 php45n03lt-06.pdf pdf_icon

PHP45N03LTA

PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance

 4.3. Size:45K  philips
 php45n03lt 2.pdf pdf_icon

PHP45N03LTA

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

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Datasheet: APM2030N , CEP603AL , CEB603AL , HY1906P , HY1906B , IRFP640 , MMD70R900P , N6004NZ , 13N50 , PHB45N03LTA , PHD45N03LTA , RU190N08 , RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH , MDC0531EURH .

History: STV50N06

Keywords - PHP45N03LTA MOSFET datasheet

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