PHB45N03LTA Datasheet and Replacement. Cross Reference Search

PHB45N03LTA Datasheet (PDF)

..1. Size:113K philips
php45n03lta phb45n03lta phd45n03lta.pdf pdf_icon

PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance

4.1. Size:89K philips
php45n03lt phb45n03lt phd45n03lt.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

4.2. Size:49K philips
phb45n03lt.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor PHB45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal resistance Surface

6.1. Size:53K philips
phb45n03t 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor PHB45N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic suitable for VDS Drain-source voltage 30 Vsurface mounting envelope using ID Drain current (DC) 45 Atrench technology. The devic

Datasheet: CEP603AL , CEB603AL , HY1906P , HY1906B , IRFP640 , MMD70R900P , N6004NZ , PHP45N03LTA , SKD502T , PHD45N03LTA , RU190N08 , RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH , MDC0531EURH , MDCA0418EURH .