PHB45N03LTA - аналоги, параметры транзистора - Справочник транзисторов

PHB45N03LTA даташит

..1. Size:113K philips
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PHP/PHB/PHD45N03LTA N-channel enhancement mode field-effect transistor Rev. 02 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). 2. Features Low on-state resistance

4.1. Size:89K philips
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Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

4.2. Size:49K philips
phb45n03lt.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor PHB45N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal resistance Surface

6.1. Size:53K philips
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Philips Semiconductors Product specification TrenchMOS transistor PHB45N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic suitable for VDS Drain-source voltage 30 V surface mounting envelope using ID Drain current (DC) 45 A trench technology. The devic

Другие MOSFET... CEP603AL , CEB603AL , HY1906P , HY1906B , IRFP640 , MMD70R900P , N6004NZ , PHP45N03LTA , RFP50N06 , PHD45N03LTA , RU190N08 , RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH , MDC0531EURH , MDCA0418EURH .