IRFS521 Datasheet and Replacement
Type Designator: IRFS521
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO220F
IRFS521 Datasheet (PDF)
irfb52n15dpbf irfs52n15dpbf.pdf

PD - 97002AIRFB52N15DPbFIRFS52N15DPbFIRFSL52N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersKey Parametersl Plasma Display PanelVDS 150 VVDS (Avalanche) min. 200 VBenefitsRDS(ON) max @ 10V 32 ml Low Gate-to-Drain Charge toTJ maxReduce\ Switching Losses 175 Cl Fully Characterized Capacitance Including Effective COSS to SimplifyDesign
irfb52n15dpbf irfs52n15dpbf irfsl52n15dpbf.pdf

PD - 97002AIRFB52N15DPbFIRFS52N15DPbFIRFSL52N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersKey Parametersl Plasma Display PanelVDS 150 VVDS (Avalanche) min. 200 VBenefitsRDS(ON) max @ 10V 32 ml Low Gate-to-Drain Charge toTJ maxReduce\ Switching Losses 175 Cl Fully Characterized Capacitance Including Effective COSS to SimplifyDesign
irfs52n15d.pdf

PD - 94357IRFB52N15D IRFS52N15DSMPS MOSFET IRFSL52N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.032 60ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current
Datasheet: IRFS450 , IRFS450A , IRFS451 , IRFS452 , IRFS453 , IRFS510A , IRFS520 , IRFS520A , 7N65 , IRFS522 , IRFS523 , IRFS530 , IRFS530A , IRFS531 , IRFS532 , IRFS533 , IRFS540 .
History: PSMN005-55B
Keywords - IRFS521 MOSFET datasheet
IRFS521 cross reference
IRFS521 equivalent finder
IRFS521 lookup
IRFS521 substitution
IRFS521 replacement
History: PSMN005-55B



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