MDD1851RH Specs and Replacement
Type Designator: MDD1851RH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19.1 nS
Cossⓘ - Output Capacitance: 226 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-252
MDD1851RH substitution
- MOSFET ⓘ Cross-Reference Search
MDD1851RH datasheet
mdd1851rh.pdf
MDD1851 N-Channel Trench MOSFET 45V, 50A, 9.0m General Description Features The MDD1851 uses advanced MagnaChip s trench V = 45V DS MOSFET Technology to provide high performance in on- I = 50A @V = 10V D GS state resistance, switching performance and reliability R DS(ON) ... See More ⇒
Detailed specifications: MDD1051RH, MDD14N25CRH, MDD1501RH, MDD1502RH, MDD1503RH, MDD1504RH, MDD1752RH, MDD1754RH, 7N60, MDD1901RH, MDD1902RH, MDD1903RH, MDD1904RH, MDD1951RH, MDD2N60RH, MDD3752ARH, MDD3752RH
Keywords - MDD1851RH MOSFET specs
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History: TPC8110
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