All MOSFET. MDD1901RH Datasheet

 

MDD1901RH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDD1901RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252

 MDD1901RH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDD1901RH Datasheet (PDF)

 ..1. Size:841K  magnachip
 mdd1901rh.pdf

MDD1901RH MDD1901RH

MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1901 is suitable device for DC/DC

 8.1. Size:881K  magnachip
 mdd1902rh.pdf

MDD1901RH MDD1901RH

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1902 is suitable device for DC/DC

 8.2. Size:802K  magnachip
 mdd1903rh.pdf

MDD1901RH MDD1901RH

MDD1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDD1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1903 is suitable device for DC to DC

 8.3. Size:992K  magnachip
 mdd1904rh.pdf

MDD1901RH MDD1901RH

MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 10.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1904 is suitable device for DC to DC

 8.4. Size:818K  cn vbsemi
 mdd1902rh.pdf

MDD1901RH MDD1901RH

MDD1902RHwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unle

 8.5. Size:287K  inchange semiconductor
 mdd1903rh.pdf

MDD1901RH MDD1901RH

isc N-Channel MOSFET Transistor MDD1903RHFEATURESDrain Current : I = 12.8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FK10SM-10

 

 
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