IRFS523 MOSFET Datasheet: N-Ch, 80V, 8A. Full specification with pinout and replacement list

IRFS523 Specs and Replacement

Type Designator: IRFS523

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220F

IRFS523 substitution

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IRFS523 datasheet

8.1. Size:325K international rectifier
irfb52n15dpbf irfs52n15dpbf.pdf pdf_icon

PD - 97002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters Key Parameters l Plasma Display Panel VDS 150 V VDS (Avalanche) min. 200 V Benefits RDS(ON) max @ 10V 32 m l Low Gate-to-Drain Charge to TJ max Reduce Switching Losses 175 C l Fully Characterized Capacitance Including Effective COSS to Simplify Design... See More ⇒

8.2. Size:325K international rectifier
irfb52n15dpbf irfs52n15dpbf irfsl52n15dpbf.pdf pdf_icon

8.3. Size:134K international rectifier
irfs52n15d.pdf pdf_icon

PD - 94357 IRFB52N15D IRFS52N15D SMPS MOSFET IRFSL52N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.032 60A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current ... See More ⇒

8.4. Size:504K samsung
irfs520a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximu... See More ⇒