MDD3752RH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDD3752RH
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 43
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44.1
nC
trⓘ - Rise Time: 17.8
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017
Ohm
Package:
TO-252
MDD3752RH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDD3752RH
Datasheet (PDF)
..1. Size:755K magnachip
mdd3752rh.pdf
MDD3752 P-Channel Trench MOSFET, -40V, -43A, 17m Features General Description V = -40V DSThe MDD3752 uses advanced MagnaChips Trench I = -43A @V = -10V D GSMOSFET Technology to provided high performance in on- R DS(ON)state resistance, switching performance and reliability.
..2. Size:890K cn vbsemi
mdd3752rh.pdf
MDD3752RHwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, un
7.1. Size:858K magnachip
mdd3752arh.pdf
MDD3752A P-Channel Trench MOSFET, -40V, -43A, 17m Features General Description V = -40V DSThe MDD3752A uses advanced MagnaChips Trench I = -43A @V = -10V D GSMOSFET Technology to provided high performance in on- R DS(ON)state resistance, switching performance and reliability.
8.1. Size:683K magnachip
mdd3754rh.pdf
MDD3754 P-Channel Trench MOSFET, -40V, -24.4A, 43m Features General Description VDS = -40V The MDD3754 uses advanced MagnaChips Trench I = -24.4A @V = -10V D GSMOSFET Technology to provided high performance in on- RDS(ON) state resistance, switching performance and reliability.
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