MDD3752RH - параметры транзистора MOSFET, его аналоги, datasheet

MDD3752RH Datasheet (PDF)

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MDD3752 P-Channel Trench MOSFET, -40V, -43A, 17m Features General Description V = -40V DSThe MDD3752 uses advanced MagnaChips Trench I = -43A @V = -10V D GSMOSFET Technology to provided high performance in on- R DS(ON)state resistance, switching performance and reliability.

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MDD3752RHwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, un

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MDD3752A P-Channel Trench MOSFET, -40V, -43A, 17m Features General Description V = -40V DSThe MDD3752A uses advanced MagnaChips Trench I = -43A @V = -10V D GSMOSFET Technology to provided high performance in on- R DS(ON)state resistance, switching performance and reliability.

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MDD3754 P-Channel Trench MOSFET, -40V, -24.4A, 43m Features General Description VDS = -40V The MDD3754 uses advanced MagnaChips Trench I = -24.4A @V = -10V D GSMOSFET Technology to provided high performance in on- RDS(ON) state resistance, switching performance and reliability.

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