All MOSFET. MDD3N40RH Datasheet

 

MDD3N40RH Datasheet and Replacement


   Type Designator: MDD3N40RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: TO-252
 
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MDD3N40RH Datasheet (PDF)

 ..1. Size:907K  magnachip
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MDD3N40RH

MDD3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDD3N40 use advanced Magnachips V = 400V DSMOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GSresistance, high switching performance and RDS(ON) 3.4 @VGS = 10V excellent quality. MDD3N40 are suitable device for SMPS and Applications general purpose appli

 9.1. Size:746K  magnachip
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MDD3N40RH

MDD3N50G N-Channel MOSFET 500V, 2.8 A, 2.5 General Description Features The MDD3N50G uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state @VGS = 10V ID = 2.8A resistance, high switching performance and @V = 10V R 2.5 DS(ON) GSexcellent quality. MDD3N50G is suitable device for SMPS, HID and general purpose applications. App

Datasheet: MDD1902RH , MDD1903RH , MDD1904RH , MDD1951RH , MDD2N60RH , MDD3752ARH , MDD3752RH , MDD3754RH , MMD60R360PRH , MDD3N50GRH , MDD4N20YRH , MDD4N25RH , MDD4N60BRH , MDD5N40RH , MDD5N50FRH , MDD5N50RH , MDD5N50ZRH .

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