All MOSFET. MDF10N60BTH Equivalents Search

 

MDF10N60BTH Spec and Replacement


   Type Designator: MDF10N60BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 28.1 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220F

 MDF10N60BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDF10N60BTH Specs

 ..1. Size:780K  magnachip
mdf10n60bth.pdf pdf_icon

MDF10N60BTH

MDF10N60B N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.7 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed ... See More ⇒

 6.1. Size:1143K  magnachip
mdf10n60gth mdp10n60gth.pdf pdf_icon

MDF10N60BTH

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl... See More ⇒

 6.2. Size:206K  inchange semiconductor
mdf10n60gth.pdf pdf_icon

MDF10N60BTH

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDF10N60GTH FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSO... See More ⇒

 7.1. Size:881K  magnachip
mdf10n65bth.pdf pdf_icon

MDF10N60BTH

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for ... See More ⇒

Detailed specifications: MDD5N50RH , MDD5N50ZRH , MDD6N60GRH , MDD7N20CRH , MDD7N25RH , MDD9N40RH , MDE1752RH , MDF10N50TH , 50N06 , MDF10N60GTH , MDF10N65BTH , MDF11N60TH , MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH .

History: STD10N60M2 | PMV30ENEA | PMV30XPEA

Keywords - MDF10N60BTH MOSFET specs

 MDF10N60BTH cross reference
 MDF10N60BTH equivalent finder
 MDF10N60BTH lookup
 MDF10N60BTH substitution
 MDF10N60BTH replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.