MDF10N60BTH Spec and Replacement
Type Designator: MDF10N60BTH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 28.1 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 153 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220F
MDF10N60BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDF10N60BTH Specs
mdf10n60bth.pdf
MDF10N60B N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.7 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed ... See More ⇒
mdf10n60gth mdp10n60gth.pdf
MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl... See More ⇒
mdf10n60gth.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDF10N60GTH FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSO... See More ⇒
mdf10n65bth.pdf
MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for ... See More ⇒
Detailed specifications: MDD5N50RH , MDD5N50ZRH , MDD6N60GRH , MDD7N20CRH , MDD7N25RH , MDD9N40RH , MDE1752RH , MDF10N50TH , 50N06 , MDF10N60GTH , MDF10N65BTH , MDF11N60TH , MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH .
History: STD10N60M2 | PMV30ENEA | PMV30XPEA
Keywords - MDF10N60BTH MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STD10N60M2 | PMV30ENEA | PMV30XPEA
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