MDF12N50FTH MOSFET Datasheet: N-Ch, 500V, 11.5A. Full specification with pinout and replacement list

MDF12N50FTH Specs and Replacement

Type Designator: MDF12N50FTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-220F

MDF12N50FTH substitution

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MDF12N50FTH datasheet

..1. Size:1068K magnachip
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MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic... See More ⇒

6.1. Size:1149K magnachip
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MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65 General Description Features The MDP/F12N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc... See More ⇒

Detailed specifications: MDE1752RH, MDF10N50TH, MDF10N60BTH, MDF10N60GTH, MDF10N65BTH, MDF11N60TH, MDF11N65BTH, MDF12N50BTH, IRFB4110, MDF13N50BTH, MDF13N50GTH, MDF13N65BTH, MDF15N60GTH, MDF16N50GTH, MDF18N50BTH, MDF1903TH, MDF2N60BTH