All MOSFET. MDF12N50FTH Datasheet

 

MDF12N50FTH Datasheet and Replacement


   Type Designator: MDF12N50FTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220F
 

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MDF12N50FTH Datasheet (PDF)

 ..1. Size:1068K  magnachip
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MDF12N50FTH

MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic

 6.1. Size:1149K  magnachip
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MDF12N50FTH

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65General Description Features The MDP/F12N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDG6332C

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