All MOSFET. MDF3752TH Datasheet

 

MDF3752TH Datasheet and Replacement


   Type Designator: MDF3752TH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 36.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44.1 nC
   tr ⓘ - Rise Time: 17.8 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-220F
 

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MDF3752TH Datasheet (PDF)

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MDF3752TH

MDF3752 P-Channel Trench MOSFET, -40V, -36.5A, 17m Features General Description VDS = -40V The MDF3752 uses advanced MagnaChips Trench I = -36.5A @V = -10V D GSMOSFET Technology to provided high performance in on- RDS(ON) state resistance, switching performance and reliability.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF632

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