All MOSFET. MDF3752TH Datasheet

 

MDF3752TH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDF3752TH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 36.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44.1 nC
   trⓘ - Rise Time: 17.8 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-220F

 MDF3752TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDF3752TH Datasheet (PDF)

 ..1. Size:642K  magnachip
 mdf3752th.pdf

MDF3752TH MDF3752TH

MDF3752 P-Channel Trench MOSFET, -40V, -36.5A, 17m Features General Description VDS = -40V The MDF3752 uses advanced MagnaChips Trench I = -36.5A @V = -10V D GSMOSFET Technology to provided high performance in on- RDS(ON) state resistance, switching performance and reliability.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM6506S | SML4020BN

 

 
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