MDF4N65BTH MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

MDF4N65BTH Specs and Replacement

Type Designator: MDF4N65BTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-220F

MDF4N65BTH substitution

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MDF4N65BTH datasheet

..1. Size:758K magnachip
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MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed... See More ⇒

8.1. Size:845K magnachip
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MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed ... See More ⇒

8.2. Size:943K magnachip
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MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device ... See More ⇒

8.3. Size:1239K magnachip
mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf pdf_icon

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable ... See More ⇒

Detailed specifications: MDF2N60BTH, MDF2N60TH, MDF2N60TP, MDF3752TH, MDF4N60BTH, MDF4N60DTH, MDF4N60TH, MDF4N60TP, AON7408, MDF5N50BTH, MDF5N50FBTH, MDF5N50FTH, MDF5N50ZTH, MDF6N60BTH, MDF6N60TH, MDF6N65BTH, MDF7N50BTH