MDF4N65BTH - описание и поиск аналогов

 

MDF4N65BTH. Аналоги и основные параметры

Наименование производителя: MDF4N65BTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 22 ns

Cossⓘ - Выходная емкость: 61 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm

Тип корпуса: TO-220F

Аналог (замена) для MDF4N65BTH

- подборⓘ MOSFET транзистора по параметрам

 

MDF4N65BTH даташит

 ..1. Size:758K  magnachip
mdf4n65bth.pdfpdf_icon

MDF4N65BTH

MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 8.1. Size:845K  magnachip
mdf4n60dth.pdfpdf_icon

MDF4N65BTH

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 8.2. Size:943K  magnachip
mdf4n60bth.pdfpdf_icon

MDF4N65BTH

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

 8.3. Size:1239K  magnachip
mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdfpdf_icon

MDF4N65BTH

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable

Другие MOSFET... MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH , MDF4N60BTH , MDF4N60DTH , MDF4N60TH , MDF4N60TP , AON7408 , MDF5N50BTH , MDF5N50FBTH , MDF5N50FTH , MDF5N50ZTH , MDF6N60BTH , MDF6N60TH , MDF6N65BTH , MDF7N50BTH .

 

 

 

 

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