MDF5N50FBTH MOSFET Datasheet: N-Ch, 500V, 4.5A. Full specification with pinout and replacement list

MDF5N50FBTH Specs and Replacement

Type Designator: MDF5N50FBTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 66 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm

Package: TO-220F

MDF5N50FBTH substitution

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MDF5N50FBTH datasheet

..1. Size:749K magnachip
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MDF5N50FB N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDF5N50FB uses advanced MagnaChip s MOSFET VDS = 500V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.55 @ VGS = 10V MDF5N50FB is suitable device for SMPS, high Speed Applications switching ... See More ⇒

6.1. Size:1047K magnachip
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MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GS high switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera... See More ⇒

7.1. Size:1034K magnachip
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MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip s MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device fo... See More ⇒

7.2. Size:1146K magnachip
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MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4 General Description Features The MDP/F5N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 5.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDP/F5N50B is suitable device for SMPS, HID and Applications general purpose... See More ⇒

Detailed specifications: MDF2N60TP , MDF3752TH , MDF4N60BTH , MDF4N60DTH , MDF4N60TH , MDF4N60TP , MDF4N65BTH , MDF5N50BTH , STP75NF75 , MDF5N50FTH , MDF5N50ZTH , MDF6N60BTH , MDF6N60TH , MDF6N65BTH , MDF7N50BTH , MDF7N60BTH , MDF7N65BTH .