Справочник MOSFET. MDF5N50FBTH

 

MDF5N50FBTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDF5N50FBTH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 16.5 ns
   Cossⓘ - Выходная емкость: 66 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.55 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для MDF5N50FBTH

 

 

MDF5N50FBTH Datasheet (PDF)

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 mdf5n50fbth.pdf

MDF5N50FBTH MDF5N50FBTH

MDF5N50FB N-Channel MOSFET 500V, 4.5 A, 1.55General Description Features The MDF5N50FB uses advanced MagnaChips MOSFET VDS = 500V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.55 @ VGS = 10V MDF5N50FB is suitable device for SMPS, high Speed Applications switching

 6.1. Size:1047K  magnachip
 mdf5n50fth mdp5n50fth.pdf

MDF5N50FBTH MDF5N50FBTH

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GShigh switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera

 7.1. Size:1034K  magnachip
 mdf5n50zth mdp5n50zth.pdf

MDF5N50FBTH MDF5N50FBTH

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device fo

 7.2. Size:1146K  magnachip
 mdf5n50bth mdp5n50bth.pdf

MDF5N50FBTH MDF5N50FBTH

MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4General Description Features The MDP/F5N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 5.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDP/F5N50B is suitable device for SMPS, HID and Applications general purpose

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