MDF5N50FBTH - аналоги, параметры транзистора - Справочник транзисторов

MDF5N50FBTH даташит

..1. Size:749K magnachip
mdf5n50fbth.pdf pdf_icon

MDF5N50FB N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDF5N50FB uses advanced MagnaChip s MOSFET VDS = 500V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.55 @ VGS = 10V MDF5N50FB is suitable device for SMPS, high Speed Applications switching

6.1. Size:1047K magnachip
mdf5n50fth mdp5n50fth.pdf pdf_icon

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GS high switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera

7.1. Size:1034K magnachip
mdf5n50zth mdp5n50zth.pdf pdf_icon

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip s MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device fo

7.2. Size:1146K magnachip
mdf5n50bth mdp5n50bth.pdf pdf_icon

MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4 General Description Features The MDP/F5N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 5.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDP/F5N50B is suitable device for SMPS, HID and Applications general purpose

Другие MOSFET... MDF2N60TP , MDF3752TH , MDF4N60BTH , MDF4N60DTH , MDF4N60TH , MDF4N60TP , MDF4N65BTH , MDF5N50BTH , STP75NF75 , MDF5N50FTH , MDF5N50ZTH , MDF6N60BTH , MDF6N60TH , MDF6N65BTH , MDF7N50BTH , MDF7N60BTH , MDF7N65BTH .