MDF6N60BTH MOSFET. Datasheet pdf. Equivalent

   Type Designator: MDF6N60BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.6 nC
   trⓘ - Rise Time: 18.2 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO-220F

MDF6N60BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MDF6N60BTH Datasheet (PDF)

..1. Size:808K magnachip
mdf6n60bth.pdf

MDF6N60B N-Channel MOSFET 600V, 6A, 1.45General Description Features The MDF6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 6.0A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.4 @ VGS = 10V MDF6N60B is suitable device for SMPS, high Speed Applications switch

7.1. Size:1095K magnachip
mdf6n60th mdp6n60th.pdf

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

8.1. Size:784K magnachip
mdf6n65bth.pdf

MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45General Description Features The MDF6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.45 excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications

9.1. Size:193K motorola
mmdf6n02hdrev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N02HD/DDesigner's Data SheetMMDF6N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect Transistors DUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power6.0 AMPERESMOSFETs which utilize Motorolas High Cell Density TMOS20 VOLTSprocess. Th

9.2. Size:207K motorola
mmdf6n03hdrev2.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N03HD/DDesigner's Data SheetMMDF6N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 35 mWproces

9.3. Size:198K motorola
mmdf6n02hd.pdf