MDF6N60BTH MOSFET Datasheet: N-Ch, 600V, 6A. Full specification with pinout and replacement list

MDF6N60BTH Specs and Replacement

Type Designator: MDF6N60BTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 13.6 nC

tr ⓘ - Rise Time: 18.2 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm

Package: TO-220F

MDF6N60BTH substitution

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MDF6N60BTH datasheet

..1. Size:808K magnachip
mdf6n60bth.pdf pdf_icon

MDF6N60B N-Channel MOSFET 600V, 6A, 1.45 General Description Features The MDF6N60B uses advanced MagnaChip s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 6.0A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.4 @ VGS = 10V MDF6N60B is suitable device for SMPS, high Speed Applications switch... See More ⇒

7.1. Size:1095K magnachip
mdf6n60th mdp6n60th.pdf pdf_icon

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for SM... See More ⇒

8.1. Size:784K magnachip
mdf6n65bth.pdf pdf_icon

MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45 General Description Features The MDF6N65B use advanced Magnachip s VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.45 excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications ... See More ⇒

9.1. Size:193K motorola
mmdf6n02hdrev1.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF6N02HD/D Designer's Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 6.0 AMPERES MOSFETs which utilize Motorola s High Cell Density TMOS 20 VOLTS process. Th... See More ⇒