MDF6N60BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDF6N60BTH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 37.9 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.6 nC
Время нарастания (tr): 18.2 ns
Выходная емкость (Cd): 77 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.45 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MDF6N60BTH
MDF6N60BTH Datasheet (PDF)
mdf6n60bth.pdf
MDF6N60B N-Channel MOSFET 600V, 6A, 1.45General Description Features The MDF6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 6.0A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.4 @ VGS = 10V MDF6N60B is suitable device for SMPS, high Speed Applications switch
mdf6n60th mdp6n60th.pdf
MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM
mdf6n65bth.pdf
MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45General Description Features The MDF6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.45 excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications
mmdf6n02hdrev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N02HD/DDesigner's Data SheetMMDF6N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect Transistors DUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power6.0 AMPERESMOSFETs which utilize Motorolas High Cell Density TMOS20 VOLTSprocess. Th
mmdf6n03hdrev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N03HD/DDesigner's Data SheetMMDF6N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 35 mWproces
mmdf6n02hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N02HD/DDesigner's Data SheetMMDF6N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect Transistors DUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power6.0 AMPERESMOSFETs which utilize Motorolas High Cell Density TMOS20 VOLTSprocess. Th
mmdf6n03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N03HD/DDesigner's Data SheetMMDF6N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 35 mWproces
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