All MOSFET. MDH3331RH Datasheet

 

MDH3331RH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDH3331RH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT-23

 MDH3331RH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDH3331RH Datasheet (PDF)

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 mdh3331rh mdh3331rp.pdf

MDH3331RH MDH3331RH

MDH3331P-Channel Trench MOSFET, -20V, -3.5A, 75mGeneral Description Features The MDH3331 uses advanced MagnaChips Trench VDS = -20V MOSFET Technology to provided high performance in on- ID = -3.5 @ VGS = -10V state resistance, switching performance and reliability. RDS(ON)

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