MDH3331RH PDF and Equivalents Search

 

MDH3331RH Specs and Replacement

Type Designator: MDH3331RH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V

Qg ⓘ - Total Gate Charge: 7 nC

tr ⓘ - Rise Time: 24.8 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT-23

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MDH3331RH datasheet

 ..1. Size:644K  magnachip
 mdh3331rh mdh3331rp.pdf pdf_icon

MDH3331RH

MDH3331 P-Channel Trench MOSFET, -20V, -3.5A, 75m General Description Features The MDH3331 uses advanced MagnaChip s Trench VDS = -20V MOSFET Technology to provided high performance in on- ID = -3.5 @ VGS = -10V state resistance, switching performance and reliability. RDS(ON) ... See More ⇒

Detailed specifications: MDF7N60BTH, MDF7N65BTH, MDF8N60BTH, MDF9N50BTH, MDF9N50FTH, MDF9N60BTH, MDFS10N60DTH, MDFS4N65DTH, 5N65, MDH3331RP, MDHT3N40URH, MDHT4N20YURH, MDHT4N25URH, MDHT7N25URH, MDI1752TH, MDI1N60STH, MDI2N60

Keywords - MDH3331RH MOSFET specs

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