MDH3331RP Specs and Replacement
Type Designator: MDH3331RP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 101 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT-23
MDH3331RP substitution
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MDH3331RP datasheet
mdh3331rh mdh3331rp.pdf
MDH3331 P-Channel Trench MOSFET, -20V, -3.5A, 75m General Description Features The MDH3331 uses advanced MagnaChip s Trench VDS = -20V MOSFET Technology to provided high performance in on- ID = -3.5 @ VGS = -10V state resistance, switching performance and reliability. RDS(ON) ... See More ⇒
Detailed specifications: MDF7N65BTH , MDF8N60BTH , MDF9N50BTH , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , IRF1010E , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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