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MDH3331RP Specs and Replacement


   Type Designator: MDH3331RP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT-23
 

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MDH3331RP Specs

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MDH3331RP

MDH3331 P-Channel Trench MOSFET, -20V, -3.5A, 75m General Description Features The MDH3331 uses advanced MagnaChip s Trench VDS = -20V MOSFET Technology to provided high performance in on- ID = -3.5 @ VGS = -10V state resistance, switching performance and reliability. RDS(ON) ... See More ⇒

Detailed specifications: MDF7N65BTH , MDF8N60BTH , MDF9N50BTH , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH , MDH3331RH , IRF1010E , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH .

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