All MOSFET. MDH3331RP Datasheet

 

MDH3331RP MOSFET. Datasheet pdf. Equivalent

Type Designator: MDH3331RP

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 24.8 nS

Drain-Source Capacitance (Cd): 101 pF

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: SOT-23

MDH3331RP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDH3331RP Datasheet (PDF)

0.1. mdh3331rh mdh3331rp.pdf Size:644K _magnachip

MDH3331RP
MDH3331RP

 MDH3331 P-Channel Trench MOSFET, -20V, -3.5A, 75mΩ General Description Features The MDH3331 uses advanced MagnaChip’s Trench VDS = -20V MOSFET Technology to provided high performance in on- ID = -3.5 @ VGS = -10V state resistance, switching performance and reliability. RDS(ON) <75mΩ @ VGS = -4.5V Low RDS(ON), Low Gate Charge can be offering superior <105mΩ @ VGS = -2.5V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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