All MOSFET. MDI2N60 Datasheet


MDI2N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: MDI2N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 1.9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 29.6 nS

Drain-Source Capacitance (Cd): 32 pF

Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm

Package: TO-251

MDI2N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MDI2N60 Datasheet (PDF)

0.1. mdd2n60rh mdi2n60.pdf Size:746K _magnachip


 MDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip’s MOSFET Technology, which provides low on- I = 1.9A @ V = 10V D GS state resistance, high switching performance and excellent R ≤ 4.5Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for

Datasheet: MDH3331RH , MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , IRFZ24N , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH .


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