MDI2N60 Datasheet. Specs and Replacement

Type Designator: MDI2N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.6 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO-251

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MDI2N60 datasheet

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MDI2N60

MDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 1.9A @ V = 10V D GS state resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for ... See More ⇒

Detailed specifications: MDH3331RH, MDH3331RP, MDHT3N40URH, MDHT4N20YURH, MDHT4N25URH, MDHT7N25URH, MDI1752TH, MDI1N60STH, AON7410, MDI4N60BTH, MDI5N40TH, MDI6N60BTH, MDI6N65BTH, MDIB6N70CTH, MDIS1501TH, MDIS1502TH, MDIS1903TH

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