MDI6N65BTH Datasheet and Replacement
Type Designator: MDI6N65BTH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 82 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO-251
MDI6N65BTH substitution
MDI6N65BTH Datasheet (PDF)
mdi6n65bth.pdf

MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45General Description Features The MDI6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state ID = 5.7A @VGS = 10V resistance, high switching performance and RDS(ON) 1.45 @VGS = 10V excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Applicat
mdi6n65bth.pdf

isc N-Channel MOSFET Transistor MDI6N65BTHFEATURESDrain Current : I = 5.7A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
mdi6n60bth.pdf

MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45General Description Features The MDI6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.45 @ VGS = 10V MDI6N60B is suitable device for SMPS, high Speed Applications swi
Datasheet: MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , CS150N03A8 , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH , MDIS3N40TH , MDIS4N65BTH .
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