All MOSFET. MDI6N65BTH Datasheet

 

MDI6N65BTH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDI6N65BTH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 119 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 82 pF

Maximum Drain-Source On-State Resistance (Rds): 1.45 Ohm

Package: TO-251

MDI6N65BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDI6N65BTH Datasheet (PDF)

1.1. mdi6n65bth.pdf Size:796K _magnachip

MDI6N65BTH
MDI6N65BTH

MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45Ω General Description Features The MDI6N65B use advanced Magnachip’s VDS = 650V MOSFET Technology, which provides low on-state ID = 5.7A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 1.45Ω @VGS = 10V excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Applicat

7.1. mdi6n60bth.pdf Size:789K _magnachip

MDI6N65BTH
MDI6N65BTH

 MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45Ω Ω Ω Ω General Description Features The MDI6N60B uses advanced MagnaChip’s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) ≤ 1.45Ω @ VGS = 10V MDI6N60B is suitable device for SMPS, high Speed Applications swi

 

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