MDI6N65BTH Datasheet. Specs and Replacement
Type Designator: MDI6N65BTH 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 82 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO-251
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MDI6N65BTH datasheet
mdi6n65bth.pdf
MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45 General Description Features The MDI6N65B use advanced Magnachip s VDS = 650V MOSFET Technology, which provides low on-state ID = 5.7A @VGS = 10V resistance, high switching performance and RDS(ON) 1.45 @VGS = 10V excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Applicat... See More ⇒
mdi6n65bth.pdf
isc N-Channel MOSFET Transistor MDI6N65BTH FEATURES Drain Current I = 5.7A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
mdi6n60bth.pdf
MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45 General Description Features The MDI6N60B uses advanced MagnaChip s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.45 @ VGS = 10V MDI6N60B is suitable device for SMPS, high Speed Applications swi... See More ⇒
Detailed specifications: MDHT4N25URH, MDHT7N25URH, MDI1752TH, MDI1N60STH, MDI2N60, MDI4N60BTH, MDI5N40TH, MDI6N60BTH, CS150N04A8, MDIB6N70CTH, MDIS1501TH, MDIS1502TH, MDIS1903TH, MDIS2N60TH, MDIS2N65BTH, MDIS3N40TH, MDIS4N65BTH
Keywords - MDI6N65BTH MOSFET specs
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