MDIS1502TH Spec and Replacement
Type Designator: MDIS1502TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 176 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-251-VS
MDIS1502TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDIS1502TH Specs
mdis1502th.pdf
MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDIS1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1502 is suitable device for DC to DC ... See More ⇒
mdis1501th.pdf
MDIS1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6m General Description Features The MDIS1501 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 67.4A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1501 is suitable device for DC to DC ... See More ⇒
mdis1903th.pdf
MDIS1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDIS1903 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 12.8A @V = 10V D GS resistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDIS1903 is suitable device for DC to DC ... See More ⇒
Detailed specifications: MDI1N60STH , MDI2N60 , MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , IRF1407 , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH , MDIS3N40TH , MDIS4N65BTH , MDIS5N40TH , MDIS5N50TH , MDP10N50TH .
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