All MOSFET. MDIS2N60TH Datasheet

 

MDIS2N60TH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDIS2N60TH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 1.9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 29.6 nS

Drain-Source Capacitance (Cd): 32 pF

Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm

Package: TO-251-VS

MDIS2N60TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDIS2N60TH Datasheet (PDF)

0.1. mdis2n60th.pdf Size:877K _magnachip

MDIS2N60TH
MDIS2N60TH

 MDIS2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω Ω Ω Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip’s MOSFET Technology, which provides low on- ID = 1.9A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 4.5Ω @ VGS = 10V quality. Applications These devices are suitable device for SM

7.1. mdis2n65bth.pdf Size:928K _magnachip

MDIS2N60TH
MDIS2N60TH

 MDIS2N65B N-Channel MOSFET 650V, 1.95A, 4.5Ω General Description Features The MDIS2N65B uses advanced MagnaChip’s  V = 650V DS MOSFET technology, which provides low on-state  I = 1.95A @V = 10V D GS resistance, high switching performance and  RDS(ON) ≤ 4.5Ω @VGS = 10V excellent quality. MDIS2N65B is suitable device for SMPS, compact ballast, battery charge

 

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