MDIS2N60TH MOSFET Datasheet: N-Ch, 600V, 1.9A. Full specification with pinout and replacement list

MDIS2N60TH Specs and Replacement

   Type Designator: MDIS2N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 29.6 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-251-VS

MDIS2N60TH substitution

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MDIS2N60TH datasheet

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MDIS2N60 N-Channel MOSFET 600V, 1.9A, 4.5 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 1.9A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SM... See More ⇒

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MDIS2N65B N-Channel MOSFET 650V, 1.95A, 4.5 General Description Features The MDIS2N65B uses advanced MagnaChip s V = 650V DS MOSFET technology, which provides low on-state I = 1.95A @V = 10V D GS resistance, high switching performance and RDS(ON) 4.5 @VGS = 10V excellent quality. MDIS2N65B is suitable device for SMPS, compact ballast, battery charge... See More ⇒

Detailed specifications: MDI4N60BTH , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , 10N65 , MDIS2N65BTH , MDIS3N40TH , MDIS4N65BTH , MDIS5N40TH , MDIS5N50TH , MDP10N50TH , MDP10N60GTH , MDP11N60TH .